Non-local Coulomb interactions and metal-insulator transition in Ti2_2O3_3: a cluster LDA+DMFT approach

We present an ab initio quantum theory of the metal-insulator transition in Ti$_2$O$_3$. The recently developed cluster LDA+DMFT scheme is applied to describe the many-body features of this compound. The conventional single site DMFT cannot reproduce a low temperature insulating phase for any reasonable values of the Coulomb interaction. We show that the non-local Coulomb interactions and the strong chemical bonding within Ti-Ti pair is the origin of the small gap insulating ground state of Ti$_2$O$_3$

Correlation effects in electronic structure of PuCoGa5

We report on results of the first realistic electronic structure calculations of the Pu-based PuCoGa5 superconductor based on the dynamical mean field theory. We find that dynamical correlations due to the local Coulomb interaction between Pu f-electrons lead to substantial modification of the electronic structure with a narrow peak being formed in vicinity of the Fermi energy, in agreement with the experimental photoemission spectra, and in contrast with the recent calculations within the LDA+U method, where only static electronic correlations have been included. Both Pu and Co contribute in equal footing to the narrow peak on the density of states at the Fermi level, the Co partial density of states being prominently affected by electronic correlations on the Pu sites. The k-resolved spectral density is calculated and the theoretical spectral function resolved extended Van Hove singularity near the Fermi energy. This singularity may lead to enchancement of the magnetic susceptebility and favour d-wave superconductivity

Excitonic Instability and Pseudogap Formation in Nodal Line Semimetal ZrSiS

Electron correlation effects are studied in ZrSiS using a combination of first-principles and model approaches. We show that basic electronic properties of ZrSiS can be described within a two-dimensional lattice model of two nested square lattices. High degree of electron-hole symmetry characteristic for ZrSiS is one of the key features of this model. Having determined model parameters from first-principles calculations, we then explicitly take electron-electron interactions into account and show that at moderately low temperatures ZrSiS exhibits excitonic instability, leading to the formation of a pseudogap in the electronic spectrum. The results can be understood in terms of Coulomb-interaction-assisted pairing of electrons and holes reminiscent to that of an excitonic insulator. Our finding allows us to provide a physical interpretation to the unusual mass enhancement of charge carriers in ZrSiS recently observed experimentally.Comment: 6 pages, 4 figures. Final versio

Probing of valley polarization in graphene via optical second-harmonic generation

Valley polarization in graphene breaks inversion symmetry and therefore leads to second-harmonic generation. We present a complete theory of this effect within a single-particle approximation. It is shown that this may be a sensitive tool to measure the valley polarization created, e.g., by polarized light and, thus, can be used for a development of ultrafast valleytronics in graphene.Comment: 5 pages, 3 figure

Adsorption of cobalt on graphene: Electron correlation effects from a quantum chemical perspective

In this work, we investigate the adsorption of a single cobalt atom (Co) on graphene by means of the complete active space self-consistent field approach, additionally corrected by the second-order perturbation theory. The local structure of graphene is modeled by a planar hydrocarbon cluster (C$_{24}$H$_{12}$). Systematic treatment of the electron correlations and the possibility to study excited states allow us to reproduce the potential energy curves for different electronic configurations of Co. We find that upon approaching the surface, the ground-state configuration of Co undergoes several transitions, giving rise to two stable states. The first corresponds to the physisorption of the adatom in the high-spin $3d^74s^2$ ($S=3/2$) configuration, while the second results from the chemical bonding formed by strong orbital hybridization, leading to the low-spin $3d^9$ ($S=1/2$) state. Due to the instability of the $3d^9$ configuration, the adsorption energy of Co is small in both cases and does not exceed 0.35 eV. We analyze the obtained results in terms of a simple model Hamiltonian that involves Coulomb repulsion ($U$) and exchange coupling ($J$) parameters for the 3$d$ shell of Co, which we estimate from first-principles calculations. We show that while the exchange interaction remains constant upon adsorption ($\simeq1.1$ eV), the Coulomb repulsion significantly reduces for decreasing distances (from 5.3 to 2.6$\pm$0.2 eV). The screening of $U$ favors higher occupations of the 3$d$ shell and thus is largely responsible for the interconfigurational transitions of Co. Finally, we discuss the limitations of the approaches that are based on density functional theory with respect to transition metal atoms on graphene, and we conclude that a proper account of the electron correlations is crucial for the description of adsorption in such systems.Comment: 12 pages, 6 figures, 2 table

Interfacial interactions between local defects in amorphous SiO2_2 and supported graphene

We present a density functional study of graphene adhesion on a realistic SiO$_2$ surface taking into account van der Waals (vdW) interactions. The SiO$_2$ substrate is modeled at the local scale by using two main types of surface defects, typical for amorphous silica: the oxygen dangling bond and three-coordinated silicon. The results show that the nature of adhesion between graphene and its substrate is qualitatively dependent on the surface defect type. In particular, the interaction between graphene and silicon-terminated SiO$_2$ originates exclusively from the vdW interaction, whereas the oxygen-terminated surface provides additional ionic contribution to the binding arising from interfacial charge transfer ($p$-type doping of graphene). Strong doping contrast for the different surface terminations provides a mechanism for the charge inhomogeneity of graphene on amorphous SiO$_2$ observed in experiments. We found that independent of the considered surface morphologies, the typical electronic structure of graphene in the vicinity of the Dirac point remains unaltered in contact with the SiO$_2$ substrate, which points to the absence of the covalent interactions between graphene and amorphous silica. The case of hydrogen-passivated SiO$_2$ surfaces is also examined. In this situation, the binding with graphene is practically independent of the type of surface defects and arises, as expected, from the vdW interactions. Finally, the interface distances obtained are shown to be in good agreement with recent experimental studies.Comment: 10 pages, 4 figure

Graphene adhesion on mica: Role of surface morphology

We investigate theoretically the adhesion and electronic properties of graphene on a muscovite mica surface using the density functional theory (DFT) with van der Waals (vdW) interactions taken into account (the vdW-DF approach). We found that irregularities in the local structure of cleaved mica surface provide different mechanisms for the mica-graphene binding. By assuming electroneutrality for both surfaces, the binding is mainly of vdW nature, barely exceeding thermal energy per carbon atom at room temperature. In contrast, if potassium atoms are non uniformly distributed on mica, the different regions of the surface give rise to $n$- or $p$-type doping of graphene. In turn, an additional interaction arises between the surfaces, significantly increasing the adhesion. For each case the electronic states of graphene remain unaltered by the adhesion. It is expected, however, that the Fermi level of graphene supported on realistic mica could be shifted relative to the Dirac point due to asymmetry in the charge doping. Obtained variations of the distance between graphene and mica for different regions of the surface are found to be consistent with recent atomic force microscopy experiments. A relative flatness of mica and the absence of interlayer covalent bonding in the mica-graphene system make this pair a promising candidate for practical use.Comment: 6 pages, 3 figure

Adsorption of diatomic halogen molecules on graphene: A van der Waals density functional study

The adsorption of fluorine, chlorine, bromine, and iodine diatomic molecules on graphene has been investigated using density functional theory with taking into account nonlocal correlation effects by means of vdW-DF approach. It is shown that the van der Waals interaction plays a crucial role in the formation of chemical bonding between graphene and halogen molecules, and is therefore important for a proper description of adsorption in this system. In-plane orientation of the molecules has been found to be more stable than the orientation perpendicular to the graphene layer. In the cases of F$_2$, Br$_2$ and I$_2$ we also found an ionic contribution to the binding energy, slowly vanishing with distance. Analysis of the electronic structure shows that ionic interaction arises due to the charge transfer from graphene to the molecules. Furthermore, we found that the increase of impurity concentration leads to the conduction band formation in graphene due to interaction between halogen molecules. In addition, graphite intercalation by halogen molecules has been investigated. In the presence of halogen molecules the binding between graphite layers becomes significantly weaker, which is in accordance with the results of recent experiments on sonochemical exfoliation of intercalated graphite.Comment: Submitted to PR